三势垒共振隧道结构中电子的几率分布和势垒贯穿系数
On Electronic Probability Distribution and Electronic Barrier Penetration Coefficient of Three Barrier Resonant Tunneling Structure
-
摘要: 建立了三势垒共振隧道结构的物理模型，应用量子力学和固体理论，求出了电子的波函数和几率分布，以具有势阱材料 In0.53 Ga0.47 As 和势垒材料 In0.52 Al0.48 As 的纳米系统为例，探讨了电场对三势垒共振隧道结构电子几率分布和势垒贯穿系数的影响．结果表明：当能量较小时，电子的几率主要分布在第1势阱中，而当能量较大时，则主要分布在第2势阱，在势垒中电子几率很小；电子随能量的几率分布有波动性，在共振能附近的几率极大，共振能随着电场强度的增大而减小；电场的存在会使电子的最可几位置向入口势垒方向移动，而使电子贯穿势垒系数减小；电子势垒贯穿系数随能量增大而增大，当能量较小时，其数值及其随能量的变化都较小，当能量较大时情况则相反．Abstract: The physical model of three barrier resonant tunneling structure has been established in this pa‐per .Applying solid state quantum mechanics ,the electron wave function and its probability distribution have been induced .Taking the nano - system with the potential well of and the barrier of material as exam‐ples ,the electric field's influence on the electronic probability distribution and electronic barrier penetration coefficient of three barrier resonant tunneling structure have been discussed .The results show that the e‐lectron probability is mainly distributed in the first potential well while the energy is smaller and that the electron probability is mainly distributed in the second well while the energy is bigger ,and so the probabil‐ity that electron is distributed in barrier is very small .The probability distribution of electrons varies with energy fluctuation ,and the probability is very greatly near the resonance energy band which decreases with the increase of electric field strength .The presence of the electric field would cause the electrons'the most probable position move to the direction of entrance barrier ,which would make the electronic barrier pene‐tration coefficient reduce .Electronic barrier penetration coefficient has increased with the increase of the energy ,and its value and variation with the energy is very small ,but it is vice versa while the energy is much bigger .
-
-
计量
- 文章访问数: 808
- HTML全文浏览数: 631
- PDF下载数: 0
- 施引文献: 0
下载: