| CHEN L, LI N, ZHANG M X, et al. Effect of Preparation Methods on Dispersion Stability and Electrochemical Performance of Graphene Sheets[J]. Journal of Solid State Chemistry, 2017, 249:9-14. doi: 10.1016/j.jssc.2017.01.009 |
| SUBRAMANIAN S, DENG D D, XU K, et al. Properties of Synthetic Epitaxial Graphene/molybdenum Disulfide Lateral Heterostructures[J]. Carbon, 2017, 125:551-556. doi: 10.1016/j.carbon.2017.09.058 |
| PALACIO I, OTERO-IRURUETA G, ALONSO C, et al. Chemistry below Graphene:Decoupling Epitaxial Graphene from Metals by Potential-controlled Electrochemical Oxidation[J]. Carbon, 2018, 129:837-846. doi: 10.1016/j.carbon.2017.12.104 |
| YANG Yang, FU Qiang, WEI Wei, et al. Segregation Growth of Epitaxial Graphene Overlayers on Ni(111)[J].科学通报(英文版), 2016, 61(19):1536-1542. |
| DAVYDOV S Y. In the Metal-EpitaxialGraphene Charge Transfer in the System[J]. Technical Physics Letters Phys Stat Sol, 201137(10):64-67. |
| DAVYDOV S Yu. On the Fermi Velocity and Static Conductivity of Epitaxial Graphene[J]. Physics of the Solid State, 2014, 56(4):849-853. doi: 10.1134/S1063783414040064 |
| ALISULTANOV Z Z. On Renormalization of the Fermi Velocity in Epitaxial Graphene[J]. Technical Physics Letters, 2013, 39(7):597-600. doi: 10.1134/S106378501307002X |
| ALISULTANOV Z Z, KAMILOV I K. Transport Properties of Epitaxial Graphene Formed on the Surface of a Metal[J]. Physics of the Solid State, 2014, 56(4):854-864. doi: 10.1134/S1063783414040027 |
| FANG X Y, YU X X, ZHENG H M, et al. Temperature-And Thickness-dependent Electrical Conductivity of Few-layer Graphene and Graphene Nanosheets[J]. Physics Letters A, 2015, 379(37):2245-2251. doi: 10.1016/j.physleta.2015.06.063 |
| 杜一帅, 康维, 郑瑞伦.外延石墨烯电导率和费米速度随温度变化规律研究[J].物理学报, 2017, 66(1):209-217. |
| DAVYDOV S Y, LEBEDEV A A. Evaluation of the Effect of Adsorption on the Conductivity of Single-layer Graphene Formed on a Semiconductor Substrate[J]. Physics of the Solid State, 2014, 56(12):2580-2583. doi: 10.1134/S1063783414120087 |
| 万纾民.固体中原子间相互作用势能函数与碱金属、碱土金属弹性的电子理论[J].中国科学(A辑数学物理学天文学技术科学), 1987, 17(2):170-178. |
| 程正富, 郑瑞伦.非简谐振动对石墨烯杨氏模量与声子频率的影响[J].物理学报, 2016, 65(10):181-188. |
| 黄昆, 韩汝琦, 固体物理学[M].北京:高等教育出版社, 2001:276-282. |
| DAVYDOV S Y. The Effect of Adsorption on Static Conductivity of Epitaxial Graphene[J]. Technical Physics Letters, 2014, 40(12):1103-1106. doi: 10.1134/S1063785014120219 |
| 郑瑞伦, 胡先权, 杨国祥.固体理论及其应用[M].重庆:西南师范大学出版社, 1996:267-271. |
| DAVYDOV S Y, TIKHONOV S K. Pressure Dependence of the Dielectric and Optical Properties of Wide-gap Semiconductors[J]. Semiconductors, 1998, 32(9):947-949. doi: 10.1134/1.1187520 |
| C.基泰尔(C. Kittel).固体物理导论[M].杨顺华, 金怀诚, 王鼎盛, 等, 译.北京: 科学出版社, 1979. |
| REINA A, JIA X T, HO J, et al. Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition[J]. Nano Letters, 2009, 9(1):30-35. doi: 10.1021/nl801827v |