TERSOFF J. Surface-Confined Alloy Formation in Immiscible Systems [J]. Physical Review Letters, 1995, 74(3): 434-437. doi: 10.1103/PhysRevLett.74.434
YUHARA J, YOKOYAMA M, MATSUI T. Two-Dimensional Solid Solution Alloy of Bi-Pb Binary Films on Rh(111) [J]. Journal of Applied Physics, 2011, 110(7): 074314-1-074314-4. doi: 10.1063/1.3650883
BERGBREITER A, HOSTER H E, BEHM R J. Segregation and Stability in Surface Alloys: Pd(x)Ru(1-x)/Ru(0001) and Pt(x)Ru(1-x)/Ru(0001) [J]. Chemphyschem, 2011, 12(6): 1148-1154. doi: 10.1002/cphc.201001087
OHTAKE A, KOCÁN P, SEINO K, et al. Ga-Rich Limit of Surface Reconstructions on GaAs(001): Atomic Structure of the (4 x 6) Phase [J]. Physical Review Letters, 2004, 93(26 pt 1): 266101-1-266101-4.
马朝科, 石明霞, 孙凯, 等. 萘酞菁分子在Cd(0001)表面的自组装和手性特征[J]. 西南师范大学学报(自然科学版), 2021, 46(11): 23-30. doi: 10.13718/j.cnki.xsxb.2021.11.004
赵亚萍, 张帅, 咸春颖, 等. 基于低共熔相变材料二元液-固相图的绘制实验设计[J]. 西南师范大学学报(自然科学版), 2021, 46(9): 147-153.
HASEGAWA S, SUEKANE O, TAKATA M, et al. Scanning Tunneling Microscopy Study of GaAs Overgrowth on InAs Islands Formed on GaAs(001)[J]. Journal of Crystal Growth, 2003, 251(1-4): 161-165. doi: 10.1016/S0022-0248(02)02403-X
WANG Z T, YAMADA-TAKAMURA Y, FUJIKAWA Y, et al. Atomistic Study of GaN Surface Grown on Si(111) [J]. Applied Physics Letters, 2005, 87(3): 032110-1-032110-3. doi: 10.1063/1.2000332
AKINLADE O, ALI I, SINGH R N. Correlation Between Bulk and Surface Phenomena in Ga-(Bi, In) and In-Bi Liquid Alloys[J]. International Journal of Modern Physics B, 2001, 15(22): 3039-3053. doi: 10.1142/S0217979201007178
DOGAN A, ARSLAN H. Calculation of the Surface Tension of Liquid Ga-Based Alloys [J]. Philosophical Magazine, 2018, 98(13): 1170-1185. doi: 10.1080/14786435.2018.1431697
TANAKA T, MATSUDA M, NAKAO K, et al. Measurement of Surface Tension of Liquid Ga-base Alloys by a Sessile Drop Method[J]. Zeitschrift Fur Metallkunde, 2001, 92(11): 1242-1246.
YANG H W, YUAN Q M, TAO D P. Predicting Enthalpies of Formation of Al-Ga-In, Al-Ga-Sn, Cd-Ga-Sn and Ga-Sn-Zn Liquid Alloys by Molecular Interaction Volume Model [J]. Materials Technology, 2012, 27(1): 15-17. doi: 10.1179/175355511X13240279340723
尹富强, 赵玉辰, 李赵春. 镓基液态金属应用的研究进展[J]. 现代化工, 2022, 42(5): 24-29.
BOLEY J W, WHITE E L, CHIU G T C, et al. Direct Writing of Gallium-Indium Alloy for Stretchable Electronics[J]. Advanced Functional Materials, 2014, 24(23): 3501-3507. doi: 10.1002/adfm.201303220
KAZEM N, HELLEBREKERS T, MAJIDI C. Soft Multifunctional Composites and Emulsions with Liquid Metals[J]. Advanced Materials, 2017, 29(27): 1605985-1-1605985-14.
KHONDOKER M A H, SAMEOTO D. Fabrication Methods and Applications of Microstructured Gallium Based Liquid Metal Alloys[J]. Smart Materials and Structures, 2016, 25(9): 093001-1-093001-23.
ZHANG J, YAO Y, SHENG L, et al. Self-Fueled Biomimetic Liquid Metal Mollusk [J]. Advanced Materials (Deerfield Beach, Fla), 2015, 27(16): 2648-2655. doi: 10.1002/adma.201405438
HALKA V, FREYLAND W. Thermal Stability of Surface Freezing Films in Ga-Based Alloys: an X-Ray Photoelectron Spectroscopy and Scanning Tunneling Microscopy Study [J]. The Journal of Chemical Physics, 2007, 127(3): 034702-1-034702-7.
PENG L, CHEN E, LIU S, et al. In Situ High-Temperature Nuclear Magnetic Resonance Characterization of Structural Evolution in Pure Gallium Melt[J]. Physical Review B, 2019, 100: 104113-1-104113-7. doi: 10.1103/PhysRevB.100.104113
赵丽娟, 谢正波, 王亚利, et al. 应力释放诱导的酞菁钴转子阵列[J]. 西南师范大学学报(自然科学版), 2019, 44(5): 19-23.
万源庆, 王俊忠. 半金属Bi(111)表面上的单分散水团簇[J]. 西南师范大学学报(自然科学版), 2021, 46(7): 39-44.
PERDEW J P, BURKE K, ERNZERHOF M. Generalized Gradient Approximation Made Simple [J]. Physical Review Letters, 1996, 77(18): 3865-3868. doi: 10.1103/PhysRevLett.77.3865
BLOCHL P E. Projector Augmented-Wave Method[J]. Physical Review B, 1994, 50(24): 17953-17979.
KRESSE G, JOUBERT D. From Ultrasoft Pseudopotentials to the Projector Augmented-Wave Method[J]. Physical Review B, 1999, 59(3): 1758-1775.
刘高福, 吴旭普, 刘家兴, et al. 外电场下GeO分子结构特性及激发性质的研究[J]. 西南大学学报(自然科学版), 2021, 43(3): 101-107.
GAO C-L, QIAN D, LIU C-H, et al. Topological Edge States and Electronic Structures of a 2D Topological Insulator: Single-Bilayer Bi (111)[J]. Chinese Physics B, 2013, 22(6): 067304-1-067304-9.