| DEPUYDT B, THEUWIS A, ROMANDIC I. Germanium: From the First Application of Czochralski Crystal Growth to Large Diameter Dislocation-Free Wafers [J]. Materials Science in Semiconductor Processing, 2006, 9(4-5): 437-443. doi: 10.1016/j.mssp.2006.08.002 |
| 宗明吉. 三代半导体材料构成光子晶体能态密度的研究[J]. 激光与红外, 2010, 40(8): 892-895. |
| NOVOSELOV K S, GEIM A K, MOROZOV S V, et al. Two-Dimensional Gas of Massless Dirac Fermions in Graphene [J]. Nature, 2005, 438(7065): 197-200. doi: 10.1038/nature04233 |
| TSE W K, QIAO Z H, YAO Y G, et al. Quantum Anomalous Hall Effect in Single-Layer and Bilayer Graphene [J]. Physical Review B, 2011, 83(15): 155447. doi: 10.1103/PhysRevB.83.155447 |
| BERGER C, SONG Z M, LI X B, et al. Electronic Confinement and Coherence in Patterned Epitaxial Graphene [J]. Science, 2006, 312(5777): 1191-1196. doi: 10.1126/science.1125925 |
| NOVOSELOV K S, GEIM A K, MOROZOV S V, et al. Electric Field Effect in Atomically Thin Carbon Films [J]. Science, 2004, 306(5696): 666-669. doi: 10.1126/science.1102896 |
| ZHANG Y B, TAN Y W, STORMER H L, et al. Experimental Observation of the Quantum Hall Effect and Berry's Phase in Graphene [J]. Nature, 2005, 438(7065): 201-204. doi: 10.1038/nature04235 |
| MUZYCHENKO D A, ORESHKIN S I, PANOV V I, et al. Single and Multi Domain Buckled Germanene Phases on Al(111) Surface [J]. Nano Research, 2019, 12(12): 2988-2996. doi: 10.1007/s12274-019-2542-1 |
| ZHUANG J C, LIU C, ZHOU Z Y, et al. Dirac Signature in Germanene on Semiconducting Substrate [J]. Advanced Science, 2018, 5(7): 1800207. doi: 10.1002/advs.201800207 |
| 秦志辉. 类石墨烯锗烯研究进展[J]. 物理学报, 2017, 66(21): 17-24. |
| YAO Y G, YE F, QI X L, et al. Spin-Orbit Gap of Graphene: First-Principles Calculations [J]. Physical Review B, 2007, 75(4): 041401. |
| LIU C C, JIANG H A, YAO Y G. Low-Energy Effective Hamiltonian Involving Spin-Orbit Coupling in Silicene and Two-Dimensional Germanium and Tin [J]. Physical Review B, 2011, 84(19): 195430. doi: 10.1103/PhysRevB.84.195430 |
| XU M S, LIANG T, SHI M M, et al. Graphene-Like Two-Dimensional Materials [J]. Chemical Reviews, 2013, 113(5): 3766-3798. doi: 10.1021/cr300263a |
| CAHANGIROV S, TOPSAKAL M, AKTVRK E, et al. Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium [J]. Physical Review Letters, 2009, 102(23): 236804. doi: 10.1103/PhysRevLett.102.236804 |
| ROOME N J, CAREY J D. Beyond Graphene: Stable Elemental Monolayers of Silicene and Germanene [J]. ACS Applied Materials & Interfaces, 2014, 6(10): 7743-7750. |
| NIJAMUDHEEN A, BHATTACHARJEE R, CHOUDHURY S, et al. Electronic and Chemical Properties of Germanene: The Crucial Role of Buckling [J]. The Journal of Physical Chemistry C, 2015, 119(7): 3802-3809. doi: 10.1021/jp511488m |
| SCALISE E, HOUSSA M, POURTOIS G, et al. Vibrational Properties of Silicene and Germanene [J]. Nano Research, 2013, 6(1): 19-28. doi: 10.1007/s12274-012-0277-3 |
| LIU C C, FENG W X, YAO Y G. Quantum Spin Hall Effect in Silicene and Two-Dimensional Germanium [J]. Physical Review Letters, 2011, 107(7): 076802. doi: 10.1103/PhysRevLett.107.076802 |
| YE X S, SHAO Z G, ZHAO H B, et al. Intrinsic Carrier Mobility of Germanene is Larger than Graphene's: First-Principle Calculations [J]. RSC Advances, 2014, 4(41): 21216-21220. doi: 10.1039/C4RA01802H |
| DÁVILA M E, XIAN L, CAHANGIROV S, et al. Germanene: a Novel Two-Dimensional Germanium Allotrope Akin to Graphene and Silicene [J]. New Journal of Physics, 2014, 16(9): 095002. doi: 10.1088/1367-2630/16/9/095002 |
| ZHUANG J C, GAO N, LI Z, et al. Cooperative Electron–Phonon Coupling and Buckled Structure in Germanene on Au(111) [J]. ACS Nano, 2017, 11(4): 3553-3559. doi: 10.1021/acsnano.7b00687 |
| BUI N N, LEDINA M, REBER T J, et al. Electrochemical Scanning Tunneling Microscopic Study of the Potential Dependence of Germanene Growth on Au(111) at pH 9. 0 [J]. ACS Nano, 2017, 11(9): 9481-9489. doi: 10.1021/acsnano.7b05236 |
| LIN C-H, HUANG A, PAI W W, et al. Single-layer dual germanene phases on Ag(111) [J]. Physical Review Materials, 2018, 2(2): 024003-1-024003-8. |
| QIN Z H, PAN J B, LU S Z, et al. Direct Evidence of Dirac Signature in Bilayer Germanene Islands on Cu(111) [J]. Advanced Materials, 2017, 29(13): 1606046. doi: 10.1002/adma.201606046 |
| LI L F, LU S Z, PAN J B, et al. Buckled Germanene Formation on Pt(111) [J]. Advanced Materials, 2014, 26(28): 4820-4824. doi: 10.1002/adma.201400909 |
| MUZYCHENKO D A, ORESHKIN A I, LEGEN'KA A D, et al. Atomic Insights into Single-Layer and Bilayer Germanene on Al(111) Surface [J]. Materials Today Physics, 2020, 14: 100241. doi: 10.1016/j.mtphys.2020.100241 |
| YAN F N, XU S G, HE C, et al. Identifying the Alloy Structures of Germanene Grown on Al(111) [J]. Physical Review B, 2022, 106(7): 075405. doi: 10.1103/PhysRevB.106.075405 |
| EDWARDS D A, WALLACE W E, CRAIG R S. Magnesium-Cadmium Alloys. Ⅳ. the Cadmium-Rich Alloys; Some Lattice Parameters and Phase Relationships between 25 and 300°. Structure of the MgCd3 Superlattice. Schottky Defects and the Anomalous Entropy1 [J]. Journal of the American Chemical Society, 1952, 74(21): 5256-5261. doi: 10.1021/ja01141a006 |
| HAHN E, KAMPSHOFF E, WÄLCHLI N, et al. Strain Driven FCC-Bct Phase Transition of Pseudomorphic Cu Films on Pd(100) [J]. Physical Review Letters, 1995, 74(10): 1803-1806. doi: 10.1103/PhysRevLett.74.1803 |
| PRATZER M, ELMERS H J, GETZLAFF M. Heteroepitaxial Growth of Co on W(110) Investigated by Scanning Tunneling Microscopy [J]. Physical Review B, 2003, 67(15): 153405. doi: 10.1103/PhysRevB.67.153405 |
| SAVIN A, JEPSEN O, FLAD J, et al. Electron Localization in Solid-State Structures of the Elements: The Diamond Structure [J]. Angewandte Chemie International Edition in English, 1992, 31(2): 187-188. doi: 10.1002/anie.199201871 |
| SAVIN A, NESPER R, WENGERT S, et al. ELF: The Electron Localization Function [J]. Angewandte Chemie International Edition in English, 1997, 36(17): 1808-1832. doi: 10.1002/anie.199718081 |
| BECKE A D, EDGECOMBE K E. A Simple Measure of Electron Localization in Atomic and Molecular Systems [J]. The Journal of Chemical Physics, 1990, 92(9): 5397-5403. doi: 10.1063/1.458517 |